- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Operating Frequency :
- P1dB - Compression Point :
- OIP3 - Third Order Intercept :
- Test Frequency :
7 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Type | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Operating Frequency | Operating Supply Current | NF - Noise Figure | Gain | P1dB - Compression Point | OIP3 - Third Order Intercept | Test Frequency | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
7,200
재고
|
Broadcom / Avago | RF Amplifier 3 SV 12.4 dB | General Purpose Amplifier | SMD/SMT | SOT-363-6 | + 150 C | Reel | 3 V | 100 MHz to 6 GHz | 42 mA | 2.8 dB | 12.4 dB | 14.8 dBm | 27 dBm | 2 GHz | ||||
|
견적을 받아 |
2,957
재고
|
Broadcom / Avago | RF Amplifier 3 SV 12.4 dB | General Purpose Amplifier | SMD/SMT | SOT-363-6 | + 150 C | Bulk | 3 V | 100 MHz to 6 GHz | 42 mA | 2.8 dB | 12.4 dB | 14.8 dBm | 27 dBm | 2 GHz | ||||
|
견적을 받아 |
100
재고
|
Analog Devices / Hittite | RF Amplifier lo Noise amp Chip, 18 - 32 GHz | RF Amplifier | SMD/SMT | - 55 C | + 85 C | Gel Pack | 3 V | 32 GHz | 65 mA | 2.8 dB | 15 dB | 14 dBm | 23 dBm | |||||
|
견적을 받아 |
25
재고
|
Analog Devices / Hittite | RF Amplifier lo Noise amp Chip, 29 - 36 GHz | Low Noise Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 3 V | 29 GHz to 36 GHz | 80 mA | 2.8 dB | 20 dB | 12 dBm | 23.5 dBm | ||||
|
견적을 받아 |
16
재고
|
Analog Devices / Hittite | RF Amplifier LNA, 29-36GHz | RF Amplifier | SMD/SMT | SMT-24 | - 40 C | + 85 C | Cut Tape | 3 V | 36 GHz | 82 mA | 2.8 dB | 21 dB | 12 dBm | 24 dBm | ||||
|
전망 | Analog Devices / Hittite | RF Amplifier GaAs MMIC PHEMT LNA, 29 - 36 GHz | Low Noise Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 3 V | 29 GHz to 36 GHz | 80 mA | 2.8 dB | 20 dB | 12 dBm | 23.5 dBm | |||||
|
견적을 받아 |
1
재고
|
CEL | RF Amplifier 3V 900MHz Amplifier | General Purpose Amplifier | SMD/SMT | SOT-363-6 | - 40 C | + 85 C | 3 V | 200 MHz to 1.5 GHz | 6 mA | 2.8 dB | 19 dB | - 8.5 dBm | 900 MHz |