- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Operating Frequency :
- Operating Supply Current :
- NF - Noise Figure :
- P1dB - Compression Point :
- OIP3 - Third Order Intercept :
8 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Type | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Operating Frequency | Operating Supply Current | NF - Noise Figure | Gain | P1dB - Compression Point | OIP3 - Third Order Intercept | Test Frequency | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
325
재고
|
Analog Devices / Hittite | RF Amplifier lo Noise amp Chip, 7 - 17 GHz | RF Amplifier | SMD/SMT | - 55 C | + 85 C | Gel Pack | 3 V | 17 GHz | 65 mA | 1.8 dB | 20 dB | 16 dBm | 20 dBm | ||||
|
|
견적을 받아 |
1,076
재고
|
Analog Devices / Hittite | RF Amplifier InGaP HBT pow amp SMT, 4.9 - 5.9 GHz | RF Amplifier | SMD/SMT | SMT-16 | - 40 C | + 85 C | Cut Tape | 3 V | 5.9 GHz | 285 mA | 6 dB | 20 dB | 23 dBm | 32 dBm | |||
|
|
견적을 받아 |
76
재고
|
Analog Devices / Hittite | RF Amplifier lo Noise amp SMT, 9 - 18 GHz | RF Amplifier | SMD/SMT | SMT-32 | - 40 C | + 85 C | Cut Tape | 3 V | 18 GHz | 65 mA | 2 dB | 20 dB | 14 dBm | 25 dBm | |||
|
|
견적을 받아 |
106
재고
|
Analog Devices / Hittite | RF Amplifier lo Noise amp SMT, 9 - 18 GHz | RF Amplifier | SMD/SMT | QFN-24 | - 40 C | + 85 C | Reel | 3 V | 18 GHz | 51 mA | 2 dB | 20 dB | 14 dBm | 25 dBm | |||
|
|
견적을 받아 |
25
재고
|
Analog Devices / Hittite | RF Amplifier lo Noise amp Chip, 29 - 36 GHz | Low Noise Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 3 V | 29 GHz to 36 GHz | 80 mA | 2.8 dB | 20 dB | 12 dBm | 23.5 dBm | |||
|
|
견적을 받아 |
6,434
재고
|
Infineon Technologies | RF Amplifier RF BIP TRANSISTORS | ESD-Robust Broadband LNA MMIC | SMD/SMT | TSLP-7-1 | - 55 C | + 150 C | Reel | 3 V | 50 MHz to 5.5 GHz | 10 mA | 1.05 dB | 20 dB | - 6.5 dBm | 1 dBm | 1.5 GHz | ||
|
|
|
전망 | Analog Devices / Hittite | RF Amplifier GaAs MMIC PHEMT LNA, 29 - 36 GHz | Low Noise Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 3 V | 29 GHz to 36 GHz | 80 mA | 2.8 dB | 20 dB | 12 dBm | 23.5 dBm | ||||
|
|
전망 | Analog Devices / Hittite | RF Amplifier InGaP HBT pow amp SMT, 4.9 - 5.9 GHz | Power Amplifier | SMD/SMT | QFN-16 | - 40 C | + 85 C | Reel | 3 V | 4.9 GHz to 5.9 GHz | 0.002 mA, 285 mA | 6 dB | 20 dB | 22.5 dBm | 31 dBm |
