- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Operating Supply Voltage :
- Operating Supply Current :
- NF - Noise Figure :
- Gain :
- P1dB - Compression Point :
- OIP3 - Third Order Intercept :
- Test Frequency :
5 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Type | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Operating Frequency | Operating Supply Current | NF - Noise Figure | Gain | P1dB - Compression Point | OIP3 - Third Order Intercept | Test Frequency | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
179
재고
|
Qorvo | RF Amplifier 5.1-5.9GHz Gain 32dB P1dB 32dBm | High Power Amplifier | SMD/SMT | QFN-20 | - 40 C | + 105 C | Reel | 5 V | 5.1 GHz to 5.9 GHz | 520 mA | 7 dB | 32 dB | 33 dBm | 5.8 GHz | ||||
|
전망 | Qorvo | RF Amplifier 5.1-5.9GHz SSG17.3dB NF7.8dB P1dB 24.6dBm | Linearity Power Amplifier | SMD/SMT | QFN-20 | - 40 C | + 85 C | Reel | 3 V to 5 V | 5.1 GHz to 5.9 GHz | 165 mA | 7.8 dB | 16.4 dB | 24 dBm | 39 dBm | 5.9 GHz | ||||
|
전망 | Analog Devices / Hittite | RF Amplifier 1 Watt pow amp SMT, 5.1 - 5.9 GHz | Power Amplifier | SMD/SMT | QFN-16 | - 40 C | + 85 C | Reel | 5 V | 5.1 GHz to 5.9 GHz | 750 mA | 6 dB | 20 dB | 30 dBm | 43 dBm | |||||
|
견적을 받아 |
10
재고
|
Microchip Technology | RF Amplifier WLAN 11a/n PA Hi Pwr | High Linearity Amplifier | SMD/SMT | QFN-16 | - 20 C | + 85 C | Reel | 5 V | 5.1 GHz to 5.9 GHz | 340 mA | 30 dB | |||||||
|
전망 | Analog Devices / Hittite | RF Amplifier 1 Watt pow amp SMT 5.1 - 5.9 GHz | Power Amplifier | SMD/SMT | QFN-16 | - 40 C | + 85 C | 5 V | 5.1 GHz to 5.9 GHz | 750 mA | 6 dB | 20 dB | 30 dBm | 43 dBm |