- Package / Case :
- Minimum Operating Temperature :
- Packaging :
- Operating Frequency :
- NF - Noise Figure :
- Gain :
- P1dB - Compression Point :
- OIP3 - Third Order Intercept :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Type | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Operating Frequency | Operating Supply Current | NF - Noise Figure | Gain | P1dB - Compression Point | OIP3 - Third Order Intercept | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
250
재고
|
Analog Devices / Hittite | RF Amplifier lo Noise amp Chip w/AGC, 2-20 GHz | RF Amplifier | SMD/SMT | - 55 C | + 85 C | Gel Pack | 5 V | 20 GHz | 60 mA | 2.5 dB | 14 dB | 19 dBm | 31 dBm | |||
|
|
견적을 받아 |
25
재고
|
Analog Devices / Hittite | RF Amplifier GaAs HEMT WBand lo Noise amp, 27-40 GHz | RF Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 4 V | 40 GHz | 60 mA | 4 dB | 11.5 dB | 15 dBm | - | ||
|
|
견적을 받아 |
45
재고
|
Analog Devices / Hittite | RF Amplifier WBand lo Noise amp SMT w/AGC, 2 - 20 GHz | RF Amplifier | SMD/SMT | SMT-32 | - 40 C | + 85 C | Cut Tape | 5 V | 20 GHz | 60 mA | 2.8 dB | 13 dB | 18 dBm | 30 dBm | ||
|
|
견적을 받아 |
50
재고
|
Analog Devices / Hittite | RF Amplifier WBand lo Noise amp Chip, DC - 20 GHz | RF Amplifier | SMD/SMT | - 55 C | + 85 C | Gel Pack | 8 V | 20 GHz | 60 mA | 2.5 dB | 14 dB | 16 dBm | 28 dBm |
