1 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Package / Case | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
120
재고
|
Qorvo | RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V | SMD/SMT | QFN-16 | Tray | 6 W | 7.5 W | GaN SiC | P-Channel | 32 V | 600 mA | - 2.7 V | 18 dB | HEMT | - |