- Maximum Operating Temperature :
- Gain :
2 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
전망 | Qorvo | RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN | SMD/SMT | + 275 C | Tray | 260 W | 288 W | GaN SiC | N-Channel | 36 V | 24 A | 145 V | 20.8 dB | HEMT | 48 V | ||||
|
전망 | Qorvo | RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN | SMD/SMT | + 250 C | Tray | 260 W | 288 W | GaN SiC | N-Channel | 36 V | 24 A | 145 V | 18 dB | HEMT | 48 V |