RF JFET 트랜지스터 - Inix Electronic

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그림	모델	가격	양		재고	제조사	기술	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Vgs - Gate-Source Breakdown Voltage	Gain	Transistor Type
	NE3508M04-T2-A	1+ $0.6760 10+ $0.5280 100+ $0.4240 500+ $0.3392 3000+ $0.2756	견적을 받아	PDF RFQ	645 재고	CEL	RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET	SMD/SMT	FTSMM-4 (M04)	+ 150 C	Reel	175 mW	GaAs	N-Channel	4 V	120 mA	- 3 V	14 dB	HFET

NE3508M04-T2-A

CEL

RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET

Stock : 645

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