3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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전망 | Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | Mini PAK | + 160 C | Reel | 400 mW | GaAs | N-Channel | 5.5 V | 305 mA | - 5 V | 15 dB | pHEMT | |||
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전망 | Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | Mini PAK | + 160 C | Reel | 400 mW | GaAs | N-Channel | 5.5 V | 305 mA | - 5 V | 15 dB | pHEMT | |||
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전망 | Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | Mini PAK | + 160 C | Bulk | 400 mW | GaAs | N-Channel | 5.5 V | 305 mA | - 5 V | 15 dB | pHEMT |
