모델	가격	양		재고	제조사	기술	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Output Power	Pd - Power Dissipation	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Vgs - Gate-Source Breakdown Voltage	Gain	Transistor Type
NPT2022	1+ $65.8640 10+ $63.4240	견적을 받아	PDF RFQ	4 재고	MACOM	RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT	Screw		+ 85 C	Tray	100 W		GaN Si	N-Channel	160 V	24 mA	3 V	21 dB	HEMT
NPT2021	1+ $33.2640 10+ $32.0320	견적을 받아	PDF RFQ	21 재고	MACOM	RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT	Screw	TO-272	+ 85 C	Tray	45 W		GaN Si	N-Channel	160 V	14 mA	3 V	14.2 dB	HEMT
NPTB00004A	1+ $4.7520 10+ $4.5760	견적을 받아	PDF RFQ	201 재고	MACOM	RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT	SMD/SMT	SOIC	+ 200 C	Tray		11.6 W	GaN Si	N-Channel	100 V	2 mA	3 mA	16 dB	HEMT
NPT25100B	1+ $68.0960 10+ $65.5720	견적을 받아	PDF RFQ	30 재고	MACOM	RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN				Bulk			GaN Si
NPT1012B	1+ $75.7400 10+ $72.9360	견적을 받아	PDF RFQ	23 재고	MACOM	RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN	Screw		+ 200 C	Tray		44 W	GaN Si	N-Channel	100 V	4 mA	3 V	13 dB	HEMT
CLF1G0060S-30U	1+ $109.0840 2+ $106.4600 5+ $104.9000 10+ $103.4160	견적을 받아	PDF RFQ	10 재고	NXP Semiconductors	RF JFET Transistors Broadband RF power GaN HEMT	SMD/SMT	SOT1227B	+ 150 C	Tube			GaN Si	N-Channel	150 V	5.1 A	3 V	13 dB	HEMT
NPT1010B	25+ $139.9800	견적을 받아 전망	PDF RFQ		MACOM	RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN				Tray			GaN Si
NPTB00025B	50+ $67.7840	견적을 받아 전망	PDF RFQ		MACOM	RF JFET Transistors DC-4.0GHz 25W Gain 13.5dB GaN HEMT				Tray			GaN Si