- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
5,028
재고
|
Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | ||
|
|
견적을 받아 |
3,399
재고
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 33 A | 31 mOhms | 4 V | 29 nC | Enhancement | ||
|
|
견적을 받아 |
2,570
재고
|
Infineon Technologies | MOSFET 20V 1 P-CH HEXFET 31mOhms 12nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 31 mOhms | 12 nC | ||||||
|
|
견적을 받아 |
2,590
재고
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement | ||
|
|
|
견적을 받아 |
2,873
재고
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement |
