- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
1
재고
|
Nexperia | MOSFET N-channel TrenchMOS standard level FET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.5 A | 128 mOhms | 2 V | Enhancement | |||
|
|
|
견적을 받아 |
19,997
재고
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.5 A | 116 mOhms | 1 V | 5.3 nC | Enhancement | ||
|
|
|
견적을 받아 |
19,270
재고
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 10 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.5 A | 150 mOhms | 4 V | 120 nC | Enhancement | ||
|
|
|
견적을 받아 |
17
재고
|
Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.5 A | 150 mOhms | Enhancement |
