- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 1.05 Ohms (2)
- 1.15 Ohms (1)
- 1.28 Ohms (4)
- 1.35 Ohms (1)
- 1.48 Ohms (1)
- 1.5 Ohms (1)
- 116 mOhms (1)
- 128 mOhms (1)
- 150 mOhms (2)
- 19 mOhms (1)
- 2 Ohms (1)
- 2.5 Ohms (3)
- 20 mOhms (1)
- 30 mOhms (2)
- 30 mOhms, 55 mOhms (1)
- 36 mOhms (1)
- 38 mOhms (2)
- 40 mOhms (1)
- 45 mOhms, 80 mOhms (1)
- 450 mOhms (1)
- 660 mOhms (1)
- 70 mOhms (2)
- 700 mOhms (1)
- 750 mOhms (1)
- 780 mOhms (4)
- 820 mOhms (3)
- 950 mOhms (1)
- 99 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
43 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
6,247
재고
|
Fairchild Semiconductor | MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 38 mOhms | Enhancement | PowerTrench | ||||
|
|
|
견적을 받아 |
4,980
재고
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 20 mOhms | Enhancement | PowerTrench SyncFET | ||||
|
|
|
견적을 받아 |
3,716
재고
|
Fairchild Semiconductor | MOSFET SO-8 COMP N-P-CH | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 20 V | 5.5 A | 30 mOhms, 55 mOhms | Enhancement | |||||
|
|
견적을 받아 |
5,086
재고
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 1.05 Ohms | UniFET | ||||||
|
|
견적을 받아 |
3,304
재고
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.5 A | 36 mOhms | Enhancement | PowerTrench | ||||
|
|
견적을 받아 |
2,765
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 660 mOhms | 3 V | 13.5 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,985
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||
|
|
|
견적을 받아 |
1,801
재고
|
Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5.5 A | 1.15 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
2,621
재고
|
Fairchild Semiconductor | MOSFET N-Channel 600V 5.5A | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 1.05 Ohms | |||||||
|
|
견적을 받아 |
1,957
재고
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | QFET | ||||
|
|
견적을 받아 |
1,000
재고
|
Fairchild Semiconductor | MOSFET 800V N-Ch Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | |||||
|
|
견적을 받아 |
5,101
재고
|
ON Semiconductor | MOSFET 20V 5.5A/-4.2A Complementary | 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 5.5 A | 45 mOhms, 80 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
1,448
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||
|
|
견적을 받아 |
3,680
재고
|
Infineon Technologies | MOSFET MOSFT 30V 5.5A 45mOhm 9.3nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.5 A | 70 mOhms | 9.3 nC | |||||||
|
|
|
견적을 받아 |
971
재고
|
STMicroelectronics | MOSFET N-Ch, 620V-1.1ohms 5.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 1.28 Ohms | 3.75 V | 34 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,894
재고
|
STMicroelectronics | MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 820 mOhms | 2 V to 4 V | 11.5 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,948
재고
|
STMicroelectronics | MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 820 mOhms | 2 V to 4 V | 11.5 nC | Enhancement | ||||
|
|
견적을 받아 |
1,139
재고
|
Fairchild Semiconductor | MOSFET SSOT-6 N-CH | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.5 A | 30 mOhms | Enhancement | PowerTrench | ||||
|
|
|
견적을 받아 |
1,303
재고
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 40 mOhms | Enhancement | PowerTrench | ||||
|
|
|
견적을 받아 |
1,071
재고
|
Fairchild Semiconductor | MOSFET N-CH/LL/200V/5.5A/0.75OHM@VGS=10V/0.78OHM@VGS=5... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5.5 A | 750 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
1,339
재고
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 5.5 A | 700 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
903
재고
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | QFET | ||||
|
|
|
견적을 받아 |
4,431
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.5 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | |||
|
|
|
견적을 받아 |
880
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||
|
|
|
견적을 받아 |
353
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 55A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||
|
|
견적을 받아 |
1,346
재고
|
ON Semiconductor | MOSFET NFET 500V 5A 1.2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5.5 A | 1.5 Ohms | 3.9 V | 18.5 nC | ||||
|
|
|
견적을 받아 |
906
재고
|
STMicroelectronics | MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOS... | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 820 mOhms | 2 V to 4 V | 11.5 nC | Enhancement | |||
|
|
견적을 받아 |
1
재고
|
Nexperia | MOSFET N-channel TrenchMOS standard level FET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.5 A | 128 mOhms | 2 V | Enhancement | ||||
|
|
|
견적을 받아 |
722
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 2 Ohms | Enhancement | |||||
|
|
|
견적을 받아 |
19,997
재고
|
Nexperia | MOSFET N-channel TrenchMOS logic level FET | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.5 A | 116 mOhms | 1 V | 5.3 nC | Enhancement |
