- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
12 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
3,324
재고
|
Infineon / IR | MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 117 A | 3.3 mOhms | 3.9 V | 98 nC | Enhancement | StrongIRFET | |||||
|
견적을 받아 |
2,282
재고
|
Infineon / IR | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | ||||||||
|
견적을 받아 |
3,077
재고
|
Infineon / IR | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.3 mOhms | 2.3 V | 50 nC | |||||||
|
견적을 받아 |
535
재고
|
Infineon / IR | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | ||||||||
|
견적을 받아 |
450
재고
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 190 nC | Enhancement | ||||||
|
견적을 받아 |
850
재고
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 210 nC | Enhancement | StrongIRFET | |||||
|
견적을 받아 |
121
재고
|
Infineon / IR | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 71 A | 3.3 mOhms | 4 V | 90 nC | Enhancement | |||||
|
견적을 받아 |
25
재고
|
Infineon / IR | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
|
전망 | Infineon / IR | MOSFET 100V 190A 4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 2 V to 4 V | 150 nC | Enhancement | |||||
|
견적을 받아 |
1,784
재고
|
Infineon / IR | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
|
전망 | Infineon / IR | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | |||||||||
|
전망 | Infineon / IR | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC |