- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
-
- - 90 A (2)
- 100 A (16)
- 106 A (1)
- 116 A (1)
- 117 A (1)
- 120 A (2)
- 123 A (3)
- 150 A (1)
- 155 A (1)
- 160 A (8)
- 161 A (1)
- 170 A (7)
- 173 A (3)
- 190 A (5)
- 20 A (2)
- 200 A (1)
- 210 A (3)
- 220 A (2)
- 24 A (1)
- 240 A (1)
- 260 A (3)
- 34 A (1)
- 35 A (1)
- 40 A (4)
- 45 A (1)
- 50 A (1)
- 60 A (2)
- 65 A (1)
- 68 A (1)
- 71 A (1)
- 75 A (2)
- 80 A (3)
- 90 A (3)
- 95 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 109 nC (1)
- 117 nC (2)
- 120 nC (7)
- 13.3 nC (2)
- 130 nC (3)
- 135 nC (2)
- 140 nC (2)
- 142 nC (2)
- 150 nC (4)
- 160 nC (2)
- 17 nC (1)
- 190 nC (5)
- 21 nC (1)
- 210 nC (1)
- 22 nC (1)
- 23 nC (3)
- 32 nC (2)
- 34 nC (1)
- 39 nC (2)
- 41 nC (1)
- 48.2 nC (2)
- 50 nC (2)
- 51 nC (1)
- 52 nC (3)
- 54 nC (1)
- 57 nC (1)
- 59 nC (2)
- 62 nC (2)
- 64 nC (2)
- 65 nC (1)
- 73 nC (2)
- 85 nC (6)
- 90 nC (1)
- 93 nC (1)
- 96 nC (1)
- 98 nC (3)
87 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
18,212
재고
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
1,254
재고
|
Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
1,940
재고
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||
|
|
견적을 받아 |
1,082
재고
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.1mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | |||||||
|
|
견적을 받아 |
3,324
재고
|
Infineon / IR | MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 117 A | 3.3 mOhms | 3.9 V | 98 nC | Enhancement | StrongIRFET | ||||
|
|
|
견적을 받아 |
2,282
재고
|
Infineon / IR | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 220 A | 3.3 mOhms | 190 nC | |||||||
|
|
견적을 받아 |
3,077
재고
|
Infineon / IR | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.3 mOhms | 2.3 V | 50 nC | ||||||
|
|
|
견적을 받아 |
1,457
재고
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 4 V | 85 nC | ||||
|
|
|
견적을 받아 |
2,491
재고
|
Infineon Technologies | MOSFET Automotive HEXFET COOLiRFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.3 mOhms | 3.9 V | 65 nC | Enhancement | |||
|
|
|
견적을 받아 |
3,740
재고
|
Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
1,787
재고
|
Nexperia | MOSFET N-Ch 80V 3.3 m std level MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.3 mOhms | 135 nC | |||||||
|
|
견적을 받아 |
1,311
재고
|
Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 3.3 mOhms | Enhancement | PowerTrench | ||||
|
|
견적을 받아 |
868
재고
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||
|
|
견적을 받아 |
1,545
재고
|
Nexperia | MOSFET N-CHAN 40V 97A | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | ||||||
|
|
|
견적을 받아 |
3,499
재고
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.3 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
2,001
재고
|
Infineon Technologies | MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.3 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,644
재고
|
Nexperia | MOSFET N-channel 60 V 4.8 mo FET | 15 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 1.7 V | 50 nC | Enhancement | |||
|
|
견적을 받아 |
728
재고
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||
|
|
|
견적을 받아 |
535
재고
|
Infineon / IR | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | |||||||
|
|
|
견적을 받아 |
1,507
재고
|
Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,447
재고
|
Infineon Technologies | MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.3 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
450
재고
|
Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 190 nC | Enhancement | |||||
|
|
견적을 받아 |
996
재고
|
STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripF... | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 3.3 mOhms | 2.5 V | 96 nC | Enhancement | |||
|
|
|
견적을 받아 |
630
재고
|
Infineon Technologies | MOSFET MOSFET N CH 60V 173A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 142 nC | StrongIRFET | |||
|
|
|
견적을 받아 |
850
재고
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 210 nC | Enhancement | StrongIRFET | ||||
|
|
|
견적을 받아 |
474
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | |||||||
|
|
|
견적을 받아 |
359
재고
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.2mOhms 85nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||
|
|
|
견적을 받아 |
776
재고
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | |||||||
|
|
|
견적을 받아 |
1,200
재고
|
Infineon Technologies | MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 93 nC | StrongIRFET | |||||||
|
|
|
견적을 받아 |
574
재고
|
Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.3 mOhms | 51 nC | OptiMOS |
