- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- 선택한 필터 :
16 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
4,340
재고
|
Infineon / IR | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | ||||
|
견적을 받아 |
7,603
재고
|
Infineon / IR | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | |||||
|
견적을 받아 |
4,228
재고
|
Infineon / IR | MOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 7.3 A | 22 mOhms | 34 nC | ||||||||
|
견적을 받아 |
4,700
재고
|
Infineon / IR | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | ||||
|
견적을 받아 |
3,000
재고
|
Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | ||||||
|
견적을 받아 |
2,918
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 104 A | 3.9 mOhms | 1.35 V to 2.35 V | 34 nC | Enhancement | StrongIRFET | |||
|
견적을 받아 |
1,403
재고
|
Infineon / IR | MOSFET MOSFT 30V 13A 8mOhm 34nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.5 mOhms | 2 V | 34 nC | |||||
|
견적을 받아 |
1,181
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 4mOhms 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 155 C | Tube | 1 Channel | Si | N-Channel | 30 V | 20 A | 4.8 mOhms | 34 nC | Enhancement | |||||
|
견적을 받아 |
101
재고
|
Infineon / IR | MOSFET 60V 1 N-CH HEXFET 40mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 29 A | 40 mOhms | 4 V | 34 nC | Enhancement | ||||
|
견적을 받아 |
8,000
재고
|
Infineon / IR | MOSFET MOSFT 30V 20A 4mOhm 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.7 mOhms | 2.32 V | 34 nC | |||||
|
견적을 받아 |
4,000
재고
|
Infineon / IR | MOSFET MOSFT P-Ch -30V -15A 7.2mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC | |||||||||
|
견적을 받아 |
2,938
재고
|
Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 4 V | 34 nC | |||||
|
견적을 받아 |
2,729
재고
|
Infineon / IR | MOSFET 1 P-CH -30V HEXFET 7.2mOhms 34nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 15 A | 11.2 mOhms | 34 nC | |||||||||
|
전망 | Infineon / IR | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | |||||
|
전망 | Infineon / IR | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
|
전망 | Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 4 V | 34 nC |