- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- ATPAK-3 (1)
- DirectFET-MZ (1)
- HSOF-8 (1)
- Power-56-8 (2)
- PowerDI3333-8 (2)
- POWERDI5060-8 (1)
- PowerFLAT-5x6-8 (1)
- PowerPAK-SO-8L-4 (1)
- PQFN-8 (1)
- PS8-8 (1)
- SO-8 (7)
- SO-FL-8 (2)
- SOIC-8 (1)
- SOP-Advance-8 (1)
- SOT-223-4 (2)
- TDSON-8 (2)
- TO-220-3 (13)
- TO-220FP-3 (5)
- TO-247-3 (4)
- TO-251-3 (4)
- TO-252-3 (25)
- TO-262-3 (1)
- TO-263-3 (1)
- TO-281-3 (1)
- TO-3P-3 (1)
- TO-3PF-3 (2)
- TSMT-8 (1)
- TSON-Advance-8 (2)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10 A (1)
- - 15 A (2)
- - 40 A (1)
- - 44 A (1)
- - 46 A (1)
- - 5.5 A (1)
- - 6 A (1)
- - 60 A (1)
- 10.2 A (2)
- 100 A (1)
- 104 A (1)
- 12 A (1)
- 13 A (4)
- 14 A (4)
- 14.4 A (2)
- 161 A (3)
- 17 A (6)
- 2.5 A (3)
- 20 A (2)
- 21 A (1)
- 23 A (1)
- 24 A (1)
- 27 A (2)
- 28 A (1)
- 29 A (1)
- 30 A (1)
- 32 A (1)
- 4.6 A (2)
- 45 A (5)
- 47.5 A (1)
- 5.5 A (5)
- 5.7 A (1)
- 50 A (1)
- 6 A (4)
- 6.2 A (1)
- 6.5 A (1)
- 60 A (2)
- 63 A (8)
- 65 A (1)
- 7.2 A (3)
- 7.3 A (2)
- 81 A (2)
- 90 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.022 Ohms (1)
- 0.13 Ohms (1)
- 1 Ohms (1)
- 1.05 Ohms (1)
- 1.15 Ohms (1)
- 1.28 Ohms (4)
- 1.35 Ohms (3)
- 1.8 mOhms (1)
- 10 mOhms (1)
- 10.5 mOhms (1)
- 10.5 Ohms (1)
- 105 mOhms (3)
- 11 mOhms (2)
- 11.2 mOhms (2)
- 11.5 mOhms (1)
- 12 mOhms (1)
- 12.1 mOhms (1)
- 12.5 mOhms (2)
- 14 mOhms (3)
- 16 mOhms (7)
- 17.4 mOhms (1)
- 18.5 mOhms (1)
- 180 mOhms (1)
- 199 mOhms (2)
- 2.2 mOhms (1)
- 2.4 Ohms (3)
- 22 mOhms (6)
- 250 mOhms (3)
- 27 mOhms (1)
- 290 mOhms (4)
- 3 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (1)
- 3.7 mOhms (1)
- 3.9 mOhms (1)
- 380 mOhms (2)
- 4 mOhms (2)
- 4.5 mOhms (2)
- 4.8 mOhms (1)
- 40 mOhms (1)
- 45 mOhms (3)
- 51 mOhms (1)
- 530 mOhms (1)
- 6.2 mOhms (1)
- 7 mOhms (2)
- 7.1 mOhms (1)
- 8 Ohms (2)
- 88 mOhms (1)
- 950 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- 선택한 필터 :
87 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23 A | 88 mOhms | 3 V | 34 nC | Enhancement | |||
|
|
견적을 받아 |
4,340
재고
|
Infineon / IR | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | |||
|
|
견적을 받아 |
7,603
재고
|
Infineon / IR | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | ||||
|
|
견적을 받아 |
2,102
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | SuperFET II | |||
|
|
견적을 받아 |
2,966
재고
|
Fairchild Semiconductor | MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 34 nC | UniFET | ||||
|
|
견적을 받아 |
981
재고
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | ||||
|
|
견적을 받아 |
3,175
재고
|
Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 22mOhms 34nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 100 V | 7.3 A | 22 mOhms | 34 nC | Enhancement | ||||
|
|
견적을 받아 |
6,949
재고
|
Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
4,228
재고
|
Infineon / IR | MOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 7.3 A | 22 mOhms | 34 nC | |||||||
|
|
견적을 받아 |
615
재고
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | ||||
|
|
견적을 받아 |
421
재고
|
STMicroelectronics | MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.4 Ohms | 34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
4,700
재고
|
Infineon / IR | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,151
재고
|
STMicroelectronics | MOSFET N-Ch 950V 7.2 Amp | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
878
재고
|
STMicroelectronics | MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 250 mOhms | 3 V | 34 nC | |||||
|
|
|
견적을 받아 |
2,826
재고
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | |||
|
|
|
견적을 받아 |
3,000
재고
|
Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | |||||
|
|
견적을 받아 |
4,238
재고
|
Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 24 A | 2.2 mOhms | 1.7 V | 34 nC | Enhancement | PowerTrench SyncFET | |||
|
|
|
견적을 받아 |
2,473
재고
|
Fairchild Semiconductor | MOSFET 80V 90A Dual DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V | 90 A | 17.4 mOhms | 2 V | 34 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,319
재고
|
Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | |||
|
|
견적을 받아 |
717
재고
|
ON Semiconductor | MOSFET N-CH Power MOSFET 1500V 2.5A | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1500 V | 2.5 A | 10.5 Ohms | 34 nC | ||||||||
|
|
|
견적을 받아 |
2,114
재고
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 161 A | 3.2 mOhms | 2.3 V | 34 nC | Enhancement | |||
|
|
견적을 받아 |
2,918
재고
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 104 A | 3.9 mOhms | 1.35 V to 2.35 V | 34 nC | Enhancement | StrongIRFET | ||
|
|
견적을 받아 |
2,600
재고
|
Vishay / Siliconix | MOSFET N-Channel 75V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 0.022 Ohms | 1.1 V | 34 nC | Enhancement | TrenchFET | ||
|
|
|
견적을 받아 |
1,170
재고
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
2,433
재고
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 46 A | 12.5 mOhms | - 2.5 V | 34 nC | Enhancement | ||||
|
|
견적을 받아 |
1,815
재고
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 12.5 mOhms | 1 V | 34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
1,403
재고
|
Infineon / IR | MOSFET MOSFT 30V 13A 8mOhm 34nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.5 mOhms | 2 V | 34 nC | ||||
|
|
|
견적을 받아 |
4,841
재고
|
Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 81 A | 4.5 mOhms | 2 V | 34 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
512
재고
|
Infineon Technologies | MOSFET N-Ch 500V 17A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 199 mOhms | 34 nC | Enhancement | CoolMOS | |||
|
|
견적을 받아 |
1,126
재고
|
Infineon Technologies | MOSFET MOSFT 30V 161A 3.3mOhm 34nC Log Lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 161 A | 4 mOhms | 34 nC |
