- Package / Case :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
1,957
재고
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | QFET | ||
|
|
견적을 받아 |
1,000
재고
|
Fairchild Semiconductor | MOSFET 800V N-Ch Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | |||
|
|
|
견적을 받아 |
903
재고
|
Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.5 A | 2.5 Ohms | Enhancement | QFET |
