- Package / Case :
- Rds On - Drain-Source Resistance :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
1,071
재고
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Fairchild Semiconductor | MOSFET N-CH/LL/200V/5.5A/0.75OHM@VGS=10V/0.78OHM@VGS=5... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5.5 A | 750 mOhms | Enhancement | |||
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전망 | Toshiba | MOSFET N-CH FET 3.7nC 100uA 200V VDSS 5.5A | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 200 V | 5.5 A | 450 mOhms | 3.7 nC |
