1 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Mounting Style | Package / Case | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
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전망 | Toshiba | MOSFET N-Ch MOS 5.5A 550V 35W 600pF 1.48 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 5.5 A | 1.48 Ohms |