- Mounting Style :
- Package / Case :
7 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
1,082
재고
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.1mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||
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|
견적을 받아 |
474
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||
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|
|
견적을 받아 |
198
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||
|
|
견적을 받아 |
250
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.1mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||
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|
|
견적을 받아 |
800
재고
|
Infineon Technologies | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | ||||||
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전망 | Infineon Technologies | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 2 V to 4 V | 120 nC | Enhancement | |||
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전망 | Infineon / IR | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC |
