- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
630
재고
|
Infineon Technologies | MOSFET MOSFET N CH 60V 173A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 142 nC | StrongIRFET | |||
|
|
견적을 받아 |
850
재고
|
Infineon / IR | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 210 nC | Enhancement | StrongIRFET | ||||
|
|
|
견적을 받아 |
399
재고
|
Infineon Technologies | MOSFET MOSFET N CH 60V 173A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 142 nC | StrongIRFET |
