- Mounting Style :
- Package / Case :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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전망 | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 240 A | 3.3 mOhms | 130 nC | Enhancement | ||||
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전망 | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 190 A | 3.3 mOhms | 130 nC | Enhancement | ||||
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전망 | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 3.3 mOhms | 4 V | 130 nC | Enhancement |
