- Package / Case :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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견적을 받아 |
45
재고
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Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 68A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 68 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement | ||
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견적을 받아 |
47
재고
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Toshiba | MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 106 A | 3.3 mOhms | 1.5 V | 48.2 nC | Enhancement |
