- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
1,254
재고
|
Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
535
재고
|
Infineon / IR | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | |||||||
|
|
|
견적을 받아 |
37
재고
|
IXYS | MOSFET 260 Amps 55V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | |||
|
|
|
견적을 받아 |
800
재고
|
Infineon Technologies | MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | |||||||
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전망 | Infineon / IR | MOSFET 100V 190A 4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 2 V to 4 V | 150 nC | Enhancement | ||||
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|
|
전망 | Infineon / IR | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC |
