- Mounting Style :
- Package / Case :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
61
재고
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IXYS | MOSFET 230 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | 2 V | 178 nC | Enhancement | |||
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견적을 받아 |
54
재고
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IXYS | MOSFET 230 Amps 75V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | ||||||||||
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견적을 받아 |
10
재고
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IXYS | MOSFET TrenchT2 HiperFETs Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | HiPerFET | |||||||||
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견적을 받아 |
50
재고
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IXYS | MOSFET 230 Amps 75V | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | ||||||||||
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전망 | IXYS | MOSFET TrenchT2 HiperFETs Power MOSFET | SMD/SMT | TO-263-7 | Tube | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | HiPerFET |
