- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
60 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
27,001
재고
|
Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
3,825
재고
|
Infineon / IR | MOSFET MOSFT 30V 78A 3.2mOhm 36nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.2 mOhms | 36 nC | |||||||
|
|
견적을 받아 |
3,085
재고
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 4.2 mOhms | Enhancement | PowerTrench | ||||
|
|
|
견적을 받아 |
1,425
재고
|
Infineon / IR | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
8,442
재고
|
Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
11,092
재고
|
Infineon Technologies | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 93 A | 4.2 mOhms | Enhancement | OptiMOS | ||||
|
|
|
견적을 받아 |
9,552
재고
|
Infineon Technologies | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 4.2 mOhms | 1.2 V | 47 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
6,474
재고
|
Infineon Technologies | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 4.2 mOhms | Enhancement | OptiMOS | ||||
|
|
견적을 받아 |
1,478
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 4.2 mOhms | 4.5 V | 117 nC | Enhancement | |||
|
|
견적을 받아 |
5,000
재고
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 40 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
759
재고
|
Infineon / IR | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
4,264
재고
|
Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
4,389
재고
|
Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
2,134
재고
|
Infineon Technologies | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 4.2 mOhms | 1.2 V | 47 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,060
재고
|
Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
|
|
견적을 받아 |
2,751
재고
|
Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 18 A | 4.2 mOhms | 1.5 V | 23 nC | Enhancement | PowerTrench SyncFET | |||
|
|
|
견적을 받아 |
498
재고
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.2 mOhms | 1.2 V | 50 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,401
재고
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,182
재고
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.2 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
1,600
재고
|
Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
416
재고
|
Infineon Technologies | MOSFET MOSFET N CH 60V 110A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
|
|
견적을 받아 |
1,380
재고
|
Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4.2 mOhms | 2.2 V | 18 nC | Enhancement | OptiMOS | ||
|
|
견적을 받아 |
1,413
재고
|
ON Semiconductor | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 4.2 mOhms | ||||||||||
|
|
|
견적을 받아 |
61
재고
|
IXYS | MOSFET 230 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | 2 V | 178 nC | Enhancement | |||
|
|
견적을 받아 |
54
재고
|
IXYS | MOSFET 230 Amps 75V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | ||||||||||
|
|
|
견적을 받아 |
2,050
재고
|
Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||
|
|
|
견적을 받아 |
1,010
재고
|
Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | 33 nC | OptiMOS | ||||
|
|
견적을 받아 |
1,666
재고
|
Nexperia | MOSFET N-channel TrenchMOS standard level FET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 75 A | 4.2 mOhms | 3 V | 35.5 nC | Enhancement | |||
|
|
|
견적을 받아 |
955
재고
|
Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | 33 nC | OptiMOS | ||||
|
|
|
견적을 받아 |
825
재고
|
ON Semiconductor | MOSFET NFET U8FL 30V 71A 4.2MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.2 mOhms | 2.2 V | 26 nC |
