- 제조사 :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
1,666
재고
|
Nexperia | MOSFET N-channel TrenchMOS standard level FET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 75 A | 4.2 mOhms | 3 V | 35.5 nC | Enhancement | ||
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전망 | Shindengen | MOSFET 75V, 100A EETMOS POWER MOSFET | 20 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 4.2 mOhms | 3 V | 104 nC | Enhancement |
