- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1 A (1)
- - 1.8 A (1)
- - 2.3 A (4)
- - 2.6 A (2)
- - 650 mA (1)
- 1 A (1)
- 1.1 A (1)
- 1.2 A (3)
- 1.9 A (3)
- 12 A (5)
- 13 A (5)
- 13.7 A (5)
- 13.8 A (19)
- 14 A (3)
- 15 A (2)
- 16 A (1)
- 16.7 A (1)
- 17 A (12)
- 18.1 A (3)
- 19 A (1)
- 2 A (3)
- 2.1 A (1)
- 2.24 A (1)
- 2.5 A (1)
- 2.9 A (1)
- 20 A (5)
- 21 A (4)
- 23 A (1)
- 26 A (4)
- 3.5 A (1)
- 32 A (2)
- 500 mA (1)
- 51 A (1)
- 6 A (1)
- 600 mA (1)
- 7.5 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
103 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
13,717
재고
|
Infineon / IR | MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 250 mOhms | 0.7 V | 2.6 nC | ||||
|
|
견적을 받아 |
31,212
재고
|
Nexperia | MOSFET TAPE13 PWR-MOS | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
9,795
재고
|
Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.2 A | 250 mOhms | Enhancement | |||||
|
|
견적을 받아 |
2,737
재고
|
Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
9,423
재고
|
Diodes Incorporated | MOSFET 100V N-Channel 2A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.9 A | 250 mOhms | Enhancement | |||||
|
|
견적을 받아 |
969
재고
|
STMicroelectronics | MOSFET N-Ch 500 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
876
재고
|
Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
878
재고
|
STMicroelectronics | MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 250 mOhms | 3 V | 34 nC | |||||
|
|
견적을 받아 |
4,852
재고
|
Diodes Incorporated | MOSFET 60V N-CH. Low Side MOSFET | - | SMD/SMT | SO-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 250 mOhms | - | - | Enhancement | IntelliFET | ||
|
|
견적을 받아 |
9,855
재고
|
Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SO-8 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 250 mOhms | Enhancement | |||||
|
|
견적을 받아 |
683
재고
|
Infineon Technologies | MOSFET MOSFT 100V 51A 250mOhm 66.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 51 A | 250 mOhms | 66.7 nC | |||||||
|
|
견적을 받아 |
4,492
재고
|
Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
397
재고
|
STMicroelectronics | MOSFET N-channel 800 V 0.25 17A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 70 nC | |||||
|
|
|
견적을 받아 |
4,295
재고
|
Infineon Technologies | MOSFET MOSFT DUAL PCh -20V 2.3A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | |||||||
|
|
|
견적을 받아 |
1,145
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
1,217
재고
|
Infineon Technologies | MOSFET N-Ch 550V 13A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 250 mOhms | Enhancement | CoolMOS | ||||
|
|
|
견적을 받아 |
2,469
재고
|
Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | ||||
|
|
|
견적을 받아 |
1,000
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
6,321
재고
|
Infineon Technologies | MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 250 mOhms | 2.6 nC | |||||||
|
|
견적을 받아 |
4,409
재고
|
Fairchild Semiconductor | MOSFET NChannel Logic Level Enhancement Mode FET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
177
재고
|
STMicroelectronics | MOSFET N-Ch 500 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 250 mOhms | Enhancement | |||||
|
|
견적을 받아 |
191
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
609
재고
|
Infineon Technologies | MOSFET N-Ch 500V 13A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 250 mOhms | 27 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
177
재고
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 500V | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 250 mOhms | 34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
423
재고
|
Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
370
재고
|
Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
503
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
390
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | CoolMOS | |||||
|
|
|
견적을 받아 |
697
재고
|
Diodes Incorporated | MOSFET 100V 2.1A N-Channel Enhancement MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.1 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
424
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS |
