- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
56 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
969
재고
|
STMicroelectronics | MOSFET N-Ch 500 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
878
재고
|
STMicroelectronics | MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 250 mOhms | 3 V | 34 nC | |||||
|
|
견적을 받아 |
683
재고
|
Infineon Technologies | MOSFET MOSFT 100V 51A 250mOhm 66.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 51 A | 250 mOhms | 66.7 nC | |||||||
|
|
|
견적을 받아 |
397
재고
|
STMicroelectronics | MOSFET N-channel 800 V 0.25 17A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 70 nC | |||||
|
|
견적을 받아 |
2,469
재고
|
Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | ||||
|
|
|
견적을 받아 |
177
재고
|
STMicroelectronics | MOSFET N-Ch 500 Volt 20 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 250 mOhms | Enhancement | |||||
|
|
견적을 받아 |
191
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
609
재고
|
Infineon Technologies | MOSFET N-Ch 500V 13A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 250 mOhms | 27 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
177
재고
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 500V | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 14 A | 250 mOhms | 34 nC | Enhancement | ||||
|
|
|
견적을 받아 |
423
재고
|
Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
370
재고
|
Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
503
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
390
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | CoolMOS | |||||
|
|
|
견적을 받아 |
424
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
1,084
재고
|
STMicroelectronics | MOSFET N-Ch, 100V-0.22ohms 6A | 20 V | Through Hole | TO-251-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
448
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
271
재고
|
Infineon Technologies | MOSFET N-Ch 600V 12A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 250 mOhms | 26 nC | Enhancement | CoolMOS | |||
|
|
|
견적을 받아 |
279
재고
|
STMicroelectronics | MOSFET N-CHANNEL 400V -.23 Zener SuperMESH 15A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 15 A | 250 mOhms | Enhancement | |||||
|
|
|
견적을 받아 |
217
재고
|
Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | CoolMOS | |||||
|
|
|
견적을 받아 |
89
재고
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
200
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 650V 13.8A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 18.1 A | 250 mOhms | 2.5 V | 32.6 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
90
재고
|
IXYS | MOSFET 600V 30A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15 A | 250 mOhms | Enhancement | HyperFET | ||||
|
|
|
견적을 받아 |
448
재고
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16.7 A | 250 mOhms | 2.1 V | 91 nC | Enhancement | CoolMOS | ||
|
|
견적을 받아 |
500
재고
|
Infineon Technologies | MOSFET N-Ch 550V 13A I2PAK-3 CoolMOS CP | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 13 A | 250 mOhms | 27 nC | CoolMOS | ||||
|
|
|
견적을 받아 |
6
재고
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
543
재고
|
Toshiba | MOSFET N-Ch 800V 2050pF 32nC 17A 45W | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 3 V | 32 nC | Enhancement |
