- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
384
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | ||
|
|
견적을 받아 |
380
재고
|
STMicroelectronics | MOSFET N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MO... | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15 A | 195 mOhms | 3 V | 29 nC | Enhancement | |||
|
|
견적을 받아 |
2,351
재고
|
Diodes Incorporated | MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS | 8 V, 8 V | SMD/SMT | X2-DFN1310-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.11 A, 2.11 A | 195 mOhms | 450 mV | 1.6 nC | Enhancement | |||
|
|
견적을 받아 |
15,382
재고
|
ON Semiconductor | MOSFET -20V -950mA P-Channel | 8 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 950 mA | 195 mOhms | Enhancement | |||||
|
|
전망 | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC |
