- Mounting Style :
- Package / Case :
- Number of Channels :
- Qg - Gate Charge :
3 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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|
견적을 받아 |
384
재고
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | |||
|
견적을 받아 |
380
재고
|
STMicroelectronics | MOSFET N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MO... | 25 V | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15 A | 195 mOhms | 3 V | 29 nC | Enhancement | ||||
|
전망 | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC |