- Mounting Style :
- Transistor Polarity :
- Qg - Gate Charge :
18 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
3,480
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
838
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
382
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
707
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
751
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
802
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
466
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
454
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
476
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
31
재고
|
STMicroelectronics | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 560 mOhms | 3 V | 13.5 nC | |||||
|
견적을 받아 |
935
재고
|
GaN Systems | MOSFET 650V Enhancement Mode Transistor | 10 V | SMD/SMT | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 650 V | 7.5 A | 560 mOhms | 1.6 V | 1.7 nC | Enhancement | |||||
|
견적을 받아 |
3,632
재고
|
ROHM Semiconductor | MOSFET N-CH 30V 3.5A TUMT6 | 12 V | SMD/SMT | SOT-363T-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 560 mOhms | Enhancement | ||||||
|
견적을 받아 |
399
재고
|
ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 800 V | 10 A | 560 mOhms | 3 V | 62 nC | Enhancement | ||||
|
견적을 받아 |
3,189
재고
|
STMicroelectronics | MOSFET MDmesh V N-Ch 650V 710V VDSS | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 560 mOhms | |||||||
|
견적을 받아 |
2,500
재고
|
STMicroelectronics | MOSFET N-Ch 650V 0.56 Ohm MDmesh M5 7A 710VDss | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 560 mOhms | |||||||
|
전망 | Panasonic | MOSFET PCH MOS FET FLT LD 1.6x1.6mm | SMD/SMT | WSSMini-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 560 mOhms | |||||||||||
|
전망 | ROHM Semiconductor | MOSFET Nch 600V 10A MOSFET | Through Hole | TO-220FP-3 | + 150 C | Bulk | Si | N-Channel | 600 V | 10 A | 560 mOhms | |||||||||||
|
견적을 받아 |
2,500
재고
|
STMicroelectronics | MOSFET N Ch 500V 0.47 Ohm 7.5A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.5 A | 560 mOhms | 3 V | 14 nC | Enhancement |