- Package / Case :
6 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
838
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
382
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
707
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
466
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
454
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | |||
|
견적을 받아 |
476
재고
|
Infineon Technologies | MOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS |