- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
17 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
3,117
재고
|
Fairchild Semiconductor | MOSFET 80V N ch Dual Cool Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 36 A | 1.06 mOhms | 3.1 V | 195 nC | Enhancement | PowerTrench | |||
|
견적을 받아 |
3,844
재고
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2.8 A | 128 mOhms | 3.1 V | 4.9 nC | PowerTrench | ||||
|
견적을 받아 |
3,714
재고
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 19 mOhms | 3.1 V | 13.4 nC | PowerTrench | ||||
|
견적을 받아 |
4,280
재고
|
Fairchild Semiconductor | MOSFET 150 N-CH PwrTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 5 A | 41 mOhms | 3.1 V | 11.3 nC | PowerTrench | ||||||
|
견적을 받아 |
6,518
재고
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 20 A | 23 mOhms | 3.1 V | 8 nC | PowerTrench | ||||
|
견적을 받아 |
1,807
재고
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 23 mOhms | 3.1 V | 6.7 nC | PowerTrench | ||||
|
견적을 받아 |
1,792
재고
|
Fairchild Semiconductor | MOSFET PT5 100/20V Symmetrical Dual Common Source | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 21 A | 32 mOhms | 3.1 V | 11 nC | PowerTrench Power Clip | ||||
|
견적을 받아 |
2,323
재고
|
Fairchild Semiconductor | MOSFET 120V NChnl Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 129 A | 4.14 mOhms | 3.1 V | 76 nC | PowerTrench | ||||
|
견적을 받아 |
2,406
재고
|
Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.4 mOhms | 3.1 V | 88 nC | OptiMOS | ||||
|
견적을 받아 |
1,416
재고
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 37 A | 23 mOhms | 3.1 V | 7.6 nC | PowerTrench | ||||
|
견적을 받아 |
566
재고
|
Fairchild Semiconductor | MOSFET CCI MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 40 A | 10.9 mOhms | 3.1 V | 45 nC | PowerTrench Power Clip | ||||
|
견적을 받아 |
752
재고
|
Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.2 mOhms | 3.1 V | 51 nC | OptiMOS | ||||
|
견적을 받아 |
1,762
재고
|
Cree, Inc. | MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT | - 5 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 31.6 A | 80 mOhms | 3.1 V | 94 nC | Enhancement | ||||
|
견적을 받아 |
3,870
재고
|
Wolfspeed / Cree | MOSFET SIC MOSFET 1700V RDS ON 1 Ohm | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 5.3 A | 1 Ohm | 3.1 V | 13 nC | Enhancement | |||||
|
전망 | Toshiba | MOSFET 60V VDSS 20V VGSS 200mA ID 150mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 3.1 V | Enhancement | ||||||
|
견적을 받아 |
257
재고
|
Toshiba | MOSFET N-Ch Sm Sig FET Id 0.2A 60V 20VGSS | SMD/SMT | SOT-346-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V | |||||||||
|
전망 | Toshiba | MOSFET N-Ch Sm Sig FET 0.2A 60V 2-in-1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V |