- Rds On - Drain-Source Resistance :
2 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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견적을 받아 |
2,406
재고
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.4 mOhms | 3.1 V | 88 nC | OptiMOS | ||
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견적을 받아 |
752
재고
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Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.2 mOhms | 3.1 V | 51 nC | OptiMOS |
