- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
13 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
견적을 받아 |
7,603
재고
|
Infineon / IR | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | |||
|
|
|
견적을 받아 |
2,826
재고
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | ||
|
|
|
견적을 받아 |
1,319
재고
|
Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | ||
|
|
견적을 받아 |
436
재고
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 34nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 45 mOhms | 34 nC | Enhancement | |||
|
|
|
견적을 받아 |
1,544
재고
|
Infineon Technologies | MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 45 mOhms | 1 V | 34 nC | |||
|
|
견적을 받아 |
287
재고
|
Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | ||||||
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|
|
견적을 받아 |
638
재고
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | ||||||
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|
|
전망 | Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 34 nC | Enhancement | |||
|
|
|
전망 | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||
|
|
|
전망 | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | |||
|
|
|
전망 | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||
|
|
|
전망 | Infineon / IR | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | |||
|
|
|
전망 | Infineon / IR | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC |
