- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
5 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV | ||
|
|
견적을 받아 |
360
재고
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | |||
|
|
|
견적을 받아 |
450
재고
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | |||
|
|
전망 | Fairchild Semiconductor | MOSFET 600V, 20A, SUPERFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 198 mOhms | 4 V | 72 nC | SuperFET | ||||
|
|
전망 | IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV |
