- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.0071 Ohms (2)
- 0.017 Ohms (1)
- 1.9 mOhms (1)
- 12 mOhms (1)
- 140 mOhms (1)
- 15.9 mOhms (2)
- 150 mOhms (2)
- 198 mOhms (1)
- 2.1 mOhms (1)
- 2.8 mOhms (1)
- 270 mOhms (2)
- 3 mOhms (1)
- 3.4 mOhms (2)
- 4 mOhms (1)
- 42 mOhms (1)
- 45 mOhms (3)
- 46 mOhms (2)
- 48 mOhms (1)
- 6.5 mOhms (1)
- 7 mOhms (1)
- 8 mOhms (1)
- 80 mOhms (2)
- 900 mOhms (3)
- 92 mOhms (2)
- 95 mOhms (1)
- 선택한 필터 :
37 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
8,323
재고
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
938
재고
|
STMicroelectronics | MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 900 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
4,783
재고
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | OptiMOS | |||
|
견적을 받아 |
1,354
재고
|
STMicroelectronics | MOSFET N-CH 100V 5.1 mOhm 45A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 7 mOhms | 4.5 V | 72 nC | |||||
|
견적을 받아 |
804
재고
|
STMicroelectronics | MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
|
견적을 받아 |
2,000
재고
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 0.0071 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
973
재고
|
STMicroelectronics | MOSFET N-Ch 550V 0.006 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
|
견적을 받아 |
2,555
재고
|
Infineon / IR | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
4,300
재고
|
Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 108 A | 3 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
471
재고
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 190 mOhm, FRFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 150 mOhms | 5 V | 72 nC | SuperFET II FRFET | ||||
|
견적을 받아 |
472
재고
|
STMicroelectronics | MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 900 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
529
재고
|
Infineon / IR | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
1,685
재고
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
431
재고
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
101
재고
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 150 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 150 mOhms | 5 V | 72 nC | SuperFET II FRFET | ||||
|
견적을 받아 |
310
재고
|
Infineon Technologies | MOSFET MOSFT 250V 46A 46mOhm 72nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 46 A | 46 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
157
재고
|
Infineon / IR | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
205
재고
|
Infineon Technologies | MOSFET MOSFT 150V 83A 15mOhm 72nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 72 nC | ||||||||
|
견적을 받아 |
1,257
재고
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14 A | 8 mOhms | - 1 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV | |||
|
견적을 받아 |
360
재고
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
450
재고
|
ROHM Semiconductor | MOSFET Nch 600V 35A Si MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 92 mOhms | 3 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
2,568
재고
|
Toshiba | MOSFET Power MOSFET N-Channel Single | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 150 A | 2.1 mOhms | 2 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
1,438
재고
|
Toshiba | MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 1.9 mOhms | 2 V to 4 V | 72 nC | UMOSVIII | ||||
|
견적을 받아 |
3,000
재고
|
ROHM Semiconductor | MOSFET 4.5V Drive Nch MOSFET | 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 2.8 mOhms | 1 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
12
재고
|
Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 35 A | 140 mOhms | 5 V | 72 nC | Enhancement | POWER MOS 7 | ||||
|
견적을 받아 |
703
재고
|
STMicroelectronics | MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 900 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
417
재고
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 24 A | 95 mOhms | 4 V | 72 nC | ||||||
|
견적을 받아 |
2,950
재고
|
Fairchild Semiconductor | MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 24 A | 4 mOhms | 72 nC | Enhancement | PowerTrench | ||||
|
견적을 받아 |
1,050
재고
|
Infineon / IR | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement |