- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
15 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
4,783
재고
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | OptiMOS | |||
|
견적을 받아 |
1,354
재고
|
STMicroelectronics | MOSFET N-CH 100V 5.1 mOhm 45A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 7 mOhms | 4.5 V | 72 nC | |||||
|
견적을 받아 |
2,000
재고
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 0.0071 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
2,555
재고
|
Infineon / IR | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
4,300
재고
|
Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 108 A | 3 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
529
재고
|
Infineon / IR | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
1,685
재고
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
310
재고
|
Infineon Technologies | MOSFET MOSFT 250V 46A 46mOhm 72nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 46 A | 46 mOhms | 72 nC | Enhancement | |||||
|
견적을 받아 |
157
재고
|
Infineon / IR | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
견적을 받아 |
1,050
재고
|
Infineon / IR | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | ||||
|
전망 | Vishay / Siliconix | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 50 A | 0.0071 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||||
|
전망 | STMicroelectronics | MOSFET N-CH 100V 49mOhm 110A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 6.5 mOhms | 2.5 V | 72 nC | Enhancement | |||||
|
견적을 받아 |
800
재고
|
Vishay Semiconductors | MOSFET 100V 47A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 0.017 Ohms | 1.5 V | 72 nC | Enhancement | TrenchFET | |||
|
전망 | Infineon Technologies | MOSFET 150V SINGLE N-CH 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 72 nC | Enhancement | ||||||
|
견적을 받아 |
49
재고
|
Infineon / IR | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement |