- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- 선택한 필터 :
6 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
479
재고
|
Infineon Technologies | MOSFET N-Ch 500V 7.6A TO220-3 CoolMOS CE | 20 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | ||||||
|
견적을 받아 |
969
재고
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 35 V, 35 V | 5.3 A, 5 A | 65 mOhms, 65 mOhms | 18.7 nC | Enhancement | |||||
|
견적을 받아 |
197
재고
|
Infineon Technologies | MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | ||||||
|
견적을 받아 |
2,500
재고
|
ON Semiconductor | MOSFET T6 60V LL DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 49 A | 7.4 mOhms | 1.2 V | 18.7 nC | Enhancement | ||||
|
견적을 받아 |
45
재고
|
Infineon Technologies | MOSFET N-Ch 500V 24A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 450 mOhms | 2.5 V | 18.7 nC | Enhancement | CoolMOS | |||
|
전망 | Infineon Technologies | MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS |