- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
479
재고
|
Infineon Technologies | MOSFET N-Ch 500V 7.6A TO220-3 CoolMOS CE | 20 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | |||||
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견적을 받아 |
197
재고
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Infineon Technologies | MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS | |||||
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|
견적을 받아 |
45
재고
|
Infineon Technologies | MOSFET N-Ch 500V 24A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 450 mOhms | 2.5 V | 18.7 nC | Enhancement | CoolMOS | ||
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전망 | Infineon Technologies | MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS |
