- Mounting Style :
- Package / Case :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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견적을 받아 |
1,281
재고
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | ||
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견적을 받아 |
1,984
재고
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Infineon Technologies | MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | |||||
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견적을 받아 |
31
재고
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement |
