- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- 선택한 필터 :
22 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
6,910
재고
|
Infineon / IR | MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4 A | 80 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
3,650
재고
|
Infineon / IR | MOSFET 30V DUAL N-CH HEXFET 50mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement | |||
|
|
견적을 받아 |
1,992
재고
|
Infineon Technologies | MOSFET MOSFT 100V 9.7A 200mOhm 16.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.7 A | 200 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
3,886
재고
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 4.0A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4 A | 80 mOhms | 16.7 nC | ||||||
|
|
견적을 받아 |
1,958
재고
|
Infineon Technologies | MOSFET MOSFT 100V 9.5A 200mOhm 16.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 9.5 A | 200 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
4,174
재고
|
Infineon / IR | MOSFET MOSFT DUAL PCh -30V 3.6A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.6 A | 100 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
5,080
재고
|
Infineon / IR | MOSFET MOSFT 55V 24A 40mOhm 16.7nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
2,790
재고
|
Infineon Technologies | MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
1,281
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | |||
|
|
|
견적을 받아 |
700
재고
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 4.9A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
519
재고
|
Infineon / IR | MOSFET MOSFT 55V 27A 16.7nC 35mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 27 A | 60 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
2,349
재고
|
Infineon Technologies | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4 A | 80 mOhms | 16.7 nC | ||||||
|
|
견적을 받아 |
1,984
재고
|
Infineon Technologies | MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | ||||||
|
|
|
견적을 받아 |
2,478
재고
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 1 V to 2 V | 16.7 nC | Enhancement | ||
|
|
|
견적을 받아 |
1,426
재고
|
Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 100mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 3.6 A | 100 mOhms | 16.7 nC | Enhancement | |||
|
|
|
견적을 받아 |
654
재고
|
Infineon Technologies | MOSFET MOSFT 55V 20A 35mOhm 16.7nC LogLvl | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 22 A | 35 mOhms | 2 V | 16.7 nC | |||
|
|
|
견적을 받아 |
1,277
재고
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 16.7 nC | Enhancement | |||
|
|
|
견적을 받아 |
31
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | |||
|
|
|
견적을 받아 |
410
재고
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 5.8A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 5.8 A | 75 mOhms | 16.7 nC | ||||||
|
|
|
전망 | Infineon / IR | MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement | |||||
|
|
|
전망 | Infineon / IR | MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4.8 A | 75 mOhms | 16.7 nC | |||||||
|
|
|
견적을 받아 |
688
재고
|
Infineon / IR | MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 1 V to 2 V | 16.7 nC | Enhancement |
