3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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견적을 받아 |
3,650
재고
|
Infineon / IR | MOSFET 30V DUAL N-CH HEXFET 50mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement | ||
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|
견적을 받아 |
700
재고
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 4.9A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | |||||
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전망 | Infineon / IR | MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement |
