- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
견적을 받아 |
1,281
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,478
재고
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 1 V to 2 V | 16.7 nC | Enhancement | ||
|
|
견적을 받아 |
654
재고
|
Infineon Technologies | MOSFET MOSFT 55V 20A 35mOhm 16.7nC LogLvl | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 22 A | 35 mOhms | 2 V | 16.7 nC | |||
|
|
|
견적을 받아 |
1,277
재고
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 28 A | 65 mOhms | 16.7 nC | Enhancement | |||
|
|
|
견적을 받아 |
31
재고
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.1 A | 210 mOhms | 16.7 nC | Enhancement | |||
|
|
|
견적을 받아 |
688
재고
|
Infineon / IR | MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 1 V to 2 V | 16.7 nC | Enhancement |
