- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
6 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
135
재고
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | ||
|
|
견적을 받아 |
75
재고
|
IXYS | MOSFET Trench HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | ||
|
|
|
견적을 받아 |
30
재고
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||
|
|
견적을 받아 |
1
재고
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||
|
|
|
견적을 받아 |
9
재고
|
IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | |||
|
|
|
견적을 받아 |
30
재고
|
IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88... | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET |
