- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.0079 Ohms (2)
- 1.6 mOhms (1)
- 125 mOhms (2)
- 13 mOhms (2)
- 130 mOhms (1)
- 145 mOhms (1)
- 150 mOhms (1)
- 17.5 mOhms (1)
- 2.3 mOhms (4)
- 2.5 mOhms (1)
- 2.7 mOhms (1)
- 20 mOhms (2)
- 23 mOhms (2)
- 25 mOhms (1)
- 3.05 mOhms (2)
- 3.5 mOhms (3)
- 3.6 mOhms (2)
- 30 mOhms (2)
- 32 mOhms (2)
- 33 mOhms (2)
- 4.1 mOhms (1)
- 4.5 mOhms (7)
- 4.9 mOhms (1)
- 40 mOhms (4)
- 43 mOhms (2)
- 5.8 mOhms (2)
- 60 mOhms (1)
- 8.4 mOhms (2)
- 800 Ohms (1)
- 800 uOhms (1)
- 9 mOhms (1)
- 선택한 필터 :
58 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
7,833
재고
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | |||||||
|
|
견적을 받아 |
848
재고
|
Infineon / IR | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
|
|
견적을 받아 |
3,472
재고
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
432
재고
|
STMicroelectronics | MOSFET N-Ch 100V 2.7 mOhm 180A STripFET VII | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 180 A | 2.7 mOhms | 180 nC | ||||||||
|
|
|
견적을 받아 |
1,262
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | ||||
|
|
|
견적을 받아 |
1,288
재고
|
IXYS | MOSFET TenchP Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | - 4 V | 180 nC | Enhancement | |||
|
|
|
견적을 받아 |
2,684
재고
|
Infineon / IR | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
3,130
재고
|
Infineon / IR | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | ||||
|
|
견적을 받아 |
397
재고
|
IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | |||
|
|
견적을 받아 |
627
재고
|
Infineon / IR | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | |||||||
|
|
|
견적을 받아 |
289
재고
|
IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 180 nC | Enhancement | |||||
|
|
|
견적을 받아 |
1,010
재고
|
Infineon / IR | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
778
재고
|
Infineon Technologies | MOSFET MOSFT PCh -55V -74A 20mOhm 120nC | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 180 nC | ||||||
|
|
|
견적을 받아 |
513
재고
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | ||||
|
|
|
견적을 받아 |
678
재고
|
Infineon / IR | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | |||||||
|
|
|
견적을 받아 |
651
재고
|
Infineon Technologies | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | |||||||
|
|
견적을 받아 |
374
재고
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | ||||
|
|
|
견적을 받아 |
1,021
재고
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | |||
|
|
|
견적을 받아 |
255
재고
|
IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | |||
|
|
견적을 받아 |
135
재고
|
IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | ||
|
|
|
견적을 받아 |
85
재고
|
IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 4 V | 180 nC | Enhancement | Linear | |||
|
|
|
견적을 받아 |
294
재고
|
Infineon / IR | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||
|
|
견적을 받아 |
668
재고
|
Infineon / IR | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 197 A | 3.05 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
261
재고
|
IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V | 180 nC | Enhancement | |||
|
|
|
견적을 받아 |
405
재고
|
Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | - 4 V | 180 nC | Enhancement | |||
|
|
|
견적을 받아 |
306
재고
|
Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | ||||
|
|
|
견적을 받아 |
141
재고
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 4.5 mOhms | 180 nC | Enhancement | ||||
|
|
|
견적을 받아 |
24
재고
|
IXYS | MOSFET 25 Amps 800V | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 125 mOhms | 4 V | 180 nC | Enhancement | CoolMOS | ||
|
|
|
견적을 받아 |
394
재고
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
75
재고
|
IXYS | MOSFET Trench HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET |
