- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
8 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
견적을 받아 |
627
재고
|
Infineon / IR | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | |||||||
|
|
|
견적을 받아 |
1,010
재고
|
Infineon / IR | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
|
견적을 받아 |
778
재고
|
Infineon Technologies | MOSFET MOSFT PCh -55V -74A 20mOhm 120nC | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 180 nC | ||||||
|
|
|
견적을 받아 |
1,021
재고
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | |||
|
|
|
견적을 받아 |
405
재고
|
Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | - 4 V | 180 nC | Enhancement | |||
|
|
|
견적을 받아 |
141
재고
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 180 A | 4.5 mOhms | 180 nC | Enhancement | ||||
|
|
|
견적을 받아 |
380
재고
|
Infineon / IR | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 180 nC | StrongIRFET | |||
|
|
|
견적을 받아 |
56
재고
|
Infineon Technologies | MOSFET MOSFT 24V 340A 1.65mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 24 V | 429 A | 800 uOhms | 180 nC |
