- 제조사 :
- Rds On - Drain-Source Resistance :
3 산물
| 그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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견적을 받아 |
397
재고
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | |||
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견적을 받아 |
1
재고
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||
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견적을 받아 |
66
재고
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 34 A | 125 mOhms | 3 V | 180 nC | Enhancement |
