- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- 선택한 필터 :
9 산물
그림 | 모델 | 가격 | 양 | 재고 | 제조사 | 기술 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
견적을 받아 |
11,766
재고
|
Vishay Semiconductors | MOSFET -200v -12A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 12 A | 0.178 Ohms | - 3.5 V | 106 nC | Enhancement | TrenchFET | |||
|
견적을 받아 |
422
재고
|
IXYS | MOSFET >1200V High Voltage Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | |||||
|
견적을 받아 |
95
재고
|
IXYS | MOSFET 1500V High Voltage Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | |||||
|
견적을 받아 |
1,168
재고
|
ROHM Semiconductor | MOSFET N-Ch MOSFET 1200V Silicon Carbide SiC | Through Hole | TO-247-3 | Tube | 1 Channel | SiC | N-Channel | 1200 V | 40 A | 80 mOhms | 4 V | 106 nC | ||||||||
|
견적을 받아 |
416
재고
|
ROHM Semiconductor | MOSFET SiC N-Ch MOSFET w/ SBD 1200V | Through Hole | TO-247-3 | Tube | 1 Channel | SiC | N-Channel | 1200 V | 40 A | 80 mOhms | 4 V | 106 nC | ||||||||
|
견적을 받아 |
3,000
재고
|
Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 201 A | 1.8 mOhms | 1 V | 106 nC | Enhancement | PowerTrench Power Clip | |||
|
견적을 받아 |
495
재고
|
Infineon Technologies | MOSFET N-Ch 60V 120A I2PAK-3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2 Ohms | 2.8 V | 106 nC | OptiMOS | ||||
|
전망 | Vishay / Siliconix | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 0.0072 Ohms | 1.5 V | 106 nC | Enhancement | |||||
|
전망 | Shindengen | MOSFET 55V, 90A EETMOS POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 90 A | 3 mOhms | 2 V | 106 nC | Enhancement |